• 4-layers DDR Substrate Board
  • 4-layers DDR Substrate Board

4-layers DDR Substrate Board

Product Model: 4-Layers DDR Substrate Board
Material: Mitsubishi Gas Chemical HL832
PCB Layers: 4 Layers
PCB Thickness: 0.25mm
Copper Thickness: 0.5oz
Solder Mask Color: Green (AUS308)
Surface Treatment: Soft Gold
Min. Aperture: 100μm
Min. Line Width: 50μm
Min. Line Spacing: 75μm
Application: IC Substrate Board

  • 4-layers DDR Substrate Board
  • Description

  • Data Sheet

Core Characteristics of DDR Package Carrier

  • High-density interconnected structure to adapt to high-speed memory signal transmission
  • Via filling electroplating and stacked via design, realizing multi-layer high-density interlayer conduction
  • Support multiple customizable surface treatment processes to match diverse packaging and assembly demands
  • Strict control of overall flatness and surface flatness, effectively avoiding warpage and assembly deviation
  • Internal resin filling technology, improving structural stability, pressure resistance and overall reliability


Manufacturing Process of DDR Package Carrier

Adopts semi-additive process combined with precision laser drilling technology, which meets the requirements of fine circuit, micro-via and high-density wiring for high-speed memory substrates, and ensures impedance consistency and signal stability.

Main Application Scenarios

DDR packaging substrates are widely used in smart phones, personal computers, IoT terminal devices and consumer electronic information products.

DDR SDRAM Technical Overview

DDR SDRAM (Double Data Rate SDRAM), also known as SDRAM II, is a dual-data-rate memory standard evolved from traditional SDRAM. First proposed by Samsung in 1996, this specification was jointly formulated by eight leading manufacturers including NEC, Mitsubishi, Fujitsu, Toshiba, Hitachi, Texas Instruments and Hyundai, and gained widespread technical support from mainstream chipset suppliers such as AMD, VIA and SiS.
As the mainstream memory standard in the early 21st century, DDR was fully compatible and promoted by major chipset vendors. Its core technical feature is to sample and transmit data simultaneously at both the rising edge and falling edge of the clock signal, doubling the effective transmission bandwidth compared with single-rate SDR SDRAM. Addressing and control signals still follow the single-edge triggering mode of traditional SDRAM, balancing performance upgrade and compatibility inheritance.
Early mainstream operating clock frequencies of DDR included 100 MHz, 133 MHz and 166 MHz. Due to dual-edge transmission characteristics, the industry adopts the calculation method of “clock frequency × 2” for model identification, forming mainstream specifications such as DDR200, DDR266, DDR333 and DDR400. High-frequency customized versions were also launched to meet high-performance application demands.
In terms of hardware specifications, DDR SDRAM modules adopt a 184-pin design with 4–6 layer PCB structure, and the electrical interface is upgraded from LVTTL to SSTL2. The key notch position is different from traditional SDRAM modules, resulting in physical incompatibility.
Different from SDRAM named by clock frequency, DDR takes theoretical data throughput as the naming basis:
  • DDR200 corresponds to PC1600, with a bandwidth of 1600 MB/s
  • DDR266 corresponds to PC2100, with a bandwidth close to 2128 MB/s
In terms of timing parameters, JEDEC JESD79 standard defines two CAS Latency (CL) specifications for DDR SDRAM: CL=2 and CL=2.5. Shorter latency delivers faster response. For PC2100 specification products, the version with CL=2 is defined as DDR266A, and the CL=2.5 version is marked as DDR266B, while PC1600 low-speed DDR has no subdivided latency grading. Reasonable matching of latency parameters can balance transmission efficiency and system operating stability.

Product Name: 4-layers DDR Substrate Board

Material: Mitsubishi Gas Chemical HL832

Layers: 4L

Thickness: 0.25mm

Copper thickness: 0.5oz

Color: Green (AUS308)

Surface treatment: Soft Gold

Minimum aperture: 100um

Minimum line distance: 75um

Minimum line width: 50um

Application: IC substrate board